Search

Power GaN Devices Market By Based on Product Type (Transistors, Enhancement-mode, Depletion-mode transistors, Diodes, Integrated circuits); By Based on end-user industry (Rewable energy, Automotive, Consumer electronics, Aerospace and defence, Telecommunication); By Region (North America, Europe, Asia Pacific, Latin America, Middle East & Africa) - Global Market Analysis, Trends, Opportunity and Forecast, 2022-2032

FREE Report Sample is Available

In-depth report coverage is now just a few seconds away

Get FREE Report Sample

Power GaN Devices Definition

Gallium nitride (GaN) is a semiconductor material that has a wide band gap and high electron mobility. This makes it ideal for high-power and high-frequency applications. GaN devices, such as transistors and diodes, are used in various power electronics applications, which include power converters, inverters, and RF amplifiers.


Power GaN Devices Market Overview ( Size and Share )

The market size for Power GaN Devices Market was USD 750.0 million in the year 2022. It is expected that the market size for Power GaN Devices will increase by approximately USD 5172.1 million by 2032 as the market for Power GaN Devices is continuously growing at a compound annual growth rate (CAGR) of 21.3% during the forecast period 2023-2032. The worldwide market for power GaN devices is expected to grow significantly in the upcoming years. This is because of the increasing demand for high-efficiency and high-power density electronics in a wide range of industries, such as renewable energy, automotive, and consumer electronics. The market is also driven by the development of new applications for GaN devices, which include the 5G telecommunications industry and military and aerospace systems.

Key players in the power GaN devices market include Efficient Power Conversion (EPC), GaN Systems, Navitas Semiconductor, Transphorm, and Wolfspeed (a division of Cree). These companies offer a wide range of GaN-based power devices, such as transistors, diodes, and integrated circuits.


 Power GaN Devices Market Report Scope

Base Year

Market Size

2022

USD 750 million

 

Forecast Year

Market Size

 

2032

USD 5172.1 million

CAGR Value

 

21.3% from 2023 to 2032

Segmentation

 

  • Based on product type
  • Based on end-user industry
  • Based on region

 

Challenges

 

  • High cost of GaN- based devices
  • Limited production capacity
  • Lack of standardization
  • Limited availability of GaN substrates
  • Competition from established technologies.

Growth Drivers

 

  • Increasing demand for high- efficiency power electronics
  • Development of new applications for GaN technology,
  • Government incentives and regulations,
  • Technological advancements
  • Increasing adoption of electric vehicles (EVs)

 


Power GaN Devices Market Key Drivers

There are various factors which help in the growth of the Power GaN Devices Market. They are as follows:

  • Increasing demand for high-efficiency power electronics: The qualities which make GaN devices ideal for power electronics applications are high efficiency and power density. The growing demand for energy-efficient devices is driving the market for power GaN devices.
  • Development of new applications for GaN technology: Gan devices are made for several purposes, such as for being used in applications and high-voltage direct current (HVDC) transmission systems. The new applications include the 5G telecommunications industry, military, and aerospace systems.
  • Government incentives and regulations: The government worldwide is implementing several rules and regulations to encourage the use of energy-efficient devices. The government is also supporting the adoption of clean energy technologies which therefore is driving the growth of the power GaN devices market.
  • Technological advancements: As technology is becoming advanced, the demand for efficient power devices is also increasing. This enables the development and increasing market demand for GaN devices.
  • Increasing adoption of electric vehicles (EVs): The GaN-based inverters are highly efficient and power-density devices. The use of these inverters in EVs makes them more efficient and the increasing adoption of EVs is increasing the growth of GaN devices.

Power GaN Devices Market Challenges

There are many challenges which are faced by Power GaN Devices Market. They are listed below:

  • High cost of GaN-based devices: GaN devices are having a high cost of production from silicon-based devices. This may act as a barrier to adoption.
  • Limited production capacity: The higher prices and shortage of devices are due to the limited production capacity of GaN-based devices.
  • Lack of standardization: The device design, manufacturing process, and testing methods are yet to be standardized as the market for GaN devices is still in the early stages. This makes it difficult for the customers to compare with other manufacturers and companies to increase production.
  • Limited availability of GaN substrates: The production can be impacted as there is limited availability of GaN substrates. They are grown on silicon carbide or sapphire substrates which are limited.
  • Competition from established technologies: The technologies such as silicon-based devices and IGBTs (insulated-gate bipolar transistors) are well established due to which GaN-based devices may face competition. They are more cost-effective as there are well-established manufacturing processes and supply chains.

Power GaN Devices Market Regional Synopsis

  • Asia-Pacific: The Asia-Pacific region has a strong demand for high-efficiency power electronics due to which it has the largest market for power GaN devices. This demand is high in countries like China, Japan, and South Korea.
  • North America: The adoption of clean energy technologies in the North American region is expected to drive the demand for power GaN devices. The market is growing at a moderate pace and there is also increasing demand for energy-efficient devices.
  • Europe: The adoption of electronic vehicles in the European region leads to moderate growth for the power GaN devices market. The increasing use of energy-efficient devices has been encouraged by the implementation of rules and regulations by the region.
  • Rest of the world: There is an increasing demand for high-efficient power electronics in other regions such as South America, the Middle East, and Africa in a wide range of industries. This is driving the market growth at a moderate pace.

Power GaN Devices Market Segmentation

The Power GaN Devices Market is segmented into various categories which are listed below:

Based on product type

  • Transistors
  • Enhancement-mode
  • Depletion-mode transistors
  • Diodes
    • Schottky diodes
    • p-n diodes
  • Integrated circuits
    • Power management integrated circuits (PMICs)
    • RF integrated circuits (RFICs)

Based on end-user industry

  • Renewable energy
    • Solar inverters
    • Wind turbine inverters
    • Energy storage systems.
  • Automotive
    • Electric and hybrid electric vehicles (EVs and HEVs)
    • Charging systems
    • Powertrain systems
  • Consumer electronics
    • Smartphones
    • Laptops
    • Other portable devices.
  • Aerospace and defence
    • Radar systems
    • Satellite systems
    • Military
    • Communications systems
  • Telecommunications
    • Base stations
    • RF amplifiers.

Based on region

  • Asia-Pacific
  • North America
  • Europe
  • Rest of the world

Power GaN Devices Market Key Players

  • Efficient Power Conversion (EPC)
  • GaN Systems
  • Navitas Semiconductor
  • Transphorm
  • Wolfspeed (a division of Cree)
  • Fijitsu Limited
  • Gan Systems
  • Toshiba
  • Panasonic
  • Texas Instruments
  • Others

Make This Report Your Own

Take Advantage of Intelligence Tailored to your Business Objective

Get a Customized Version
Get 10% discount on any market research report of your choice.
Booklet
  • Publication date: 21st October 2023
  • Base year: 2022
  • Forecast year: 2023-2033
  • Format: PDF, PPT,Word,Excel

- ISO Certified Logo -


FAQ

Power GaN (Gallium Nitride) devices are electronic components that utilize Gallium Nitride as the semiconductor material. These devices are designed to handle high power and high-frequency applications, offering advantages such as high efficiency, low on-resistance, and fast switching speeds.

Power GaN Devices Market is estimated to reach $5172.1 Million by 2032 from initial market size of $750 Million in 2022 by growing at a CAGR of 21.3% over the forecast period ( 2023 – 2032 )

the Power GaN devices market faces a few challenges. These include the high cost of GaN material and manufacturing processes compared to traditional silicon-based devices, the need for standardization and regulations, and the complexity of integrating GaN devices into existing systems.

The Power GaN devices market features several major players competing in the industry. Some of the prominent companies in this market include Infineon Technologies AG, Texas Instruments Inc., Panasonic Corporation, Efficient Power Conversion Corporation, GaN Systems Inc., Navitas Semiconductor, Power Integrations Inc., and VisIC Technologies Ltd., among others.

-: Our Clients :-

Subscribe to Our Company Updates

* We will not share your personal information with anyone
Go Up