Sic & GaN power semiconductor market
Sic & GaN Power Semiconductor Market - By Application and Global Region - Market Size, Share, Trends & Forecast 2020-2025Request Sample Request Discount
The global SiC GaN power semiconductor market size was estimated at USD 0.41 billion in 2019 and is expected grow with a CAGR of 28% over the forecasted period of 2020 to 2025. The worldwide market is significantly determined by the surge in several technological advancements and growth in the semiconductor industry around the globe. There are some factors that may fuel the innovation and SiC GaN power semiconductor market. They are- the ability of the SiC to deliver lower losses and high efficiency along with the increase in application of IGBT modules.
The business will present promising development possibilities, which are stemmed by the blend of various factors. Some of these factors are, the rising introduction of 5G mobile communication and emerging adoption of electric vehicles. In addition to this, for various power applications, the power semiconductor devices such as SiC and GaN are witnessing higher adoption. Likewise, the technological advancements across automotive electronics along with flourishing automotive production in China and India have unlocked significant opportunities for the market development.
As the SiC has higher dielectric breakdown field strength, it enables an electronics device with lower loss and higher breakdown voltage than the conventional silicon devices. Also, SiC has become more popular in the areas of high withstand voltage and high current, as a replacement for silicon IGBTs. On the other hand, GaN devices are popularly being adopted in power supplies of about 1 kW or less. For instance, GaN devices have experienced emerging adoption in power source for base stations in the 5G mobile communication systems. Hence, 5G communication is anticipated to further push the demand for GaN devices.
The market is seeing extensive consolidations and acquisitions. This is to accomplish upgraded portfolios and generate new revenue streams. For instance, March 2020, STMicroelectronics, a leading semiconductor company acquired a majority stake in Exagan, a French Gallium Nitride (GaN) innovator. Such developments are further expected to drive market growth.
The huge demand for power supply equipment in some of the largest industrial markets such as India and China are fortifying the Asia Pacific market. The Asia Pacific area may surface as a main district over the estimated time frame. The provincial market development is attributed to considerable presence of the cheap labor and raw materials, which is strengthening the production facilities across region.
Moreover, electric vehicle and power supply applications have increasingly boosted the energy demand in the U.S., generating a significant need for higher system efficiency along with the increased adoption rate of GaN & SiC semiconductor devices.
Furthermore, the GaN and SiC power semiconductor are extensively being used in applications such as industrial motor devices, PV inverters, traction, power supplies, and others. These compound semiconductors consume less power and offers more energy saving; thus, they are finding huge applications around the globe. The aforementioned factor drives the global GaN & SiC semiconductor market.
In view of product types, the market has been portioned into SiC Power Module, GaN Power Module, Discrete GaN, and Discrete SiC. The SiC Power Module section is the biggest portion, regarding income, and may rule the innovation field, as far as size, by 2025.
SiC power modules have become a vital component in various power applications owing to its features & capabilities such as less thermal expansion and wider band gap. Such modules are being adopted to replace silicon semiconductors, further contributing to a growth of the SiC GaN power semiconductor market.
The GaN Power Module and Discrete GaN fragments should observe impressive development and rule the market (regarding development rates) over the conjecture time frame. The GaN materials are able to be used at more temperatures than the conventional silicon, making them suitable for critical environment applications. This factor significantly drives growth of the market.
Consolidations and acquisitions, to accomplish cutting edge innovation licenses, have advanced as a significant piece of the current SiC GaN power semiconductor industry. For example, in June 2020, Vitesco Technologies, a supplier in the field of vehicle electrification, partnered with ROHM Semiconductor, a leading company in SiC power semiconductors. Through this partnership, Vitesco Technologies is projected to use SiC components to increase the efficiency of its power electronics for electric vehicles (EV).
In light of application, the market is divided into Industrial Motor Drives, Power Supplies, electric vehicle (H/EV), PV Inverters, and Traction. The power supplies application fragment is the biggest section and will overwhelm the application field, by 2025. The electric vehicle applications section would observe a quick movement as far as CAGR in contrast with its other sales partners.
The industrial motor drives and traction application portions may observe critical development rates. This is due to the high demand for power semiconductor devices in driving motors, particularly in switching them from low to high speeds. The increasing awareness for reduction in power consumption and energy saving in recent times has significantly driven the demand for SiC GaN power semiconductor on account of their low power consumption capabilities.
Competitive Market Insights
The key business members of the market are Infineon Technologies AG, ROHM Semiconductor, Sanken Electric Company, United Silicon Carbide Inc., STMicroelectronics N.V., Raytheon Company, Monolith Semiconductor Inc., Genesic semiconductor Inc., and Panasonic Corporation. The broad proliferation of internet has affected expanded selection of SiC GaN power semiconductor in the global electronics & semiconductor sector.
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